| 264-SSM3K56FS,LFCT-ND |
SSM3K56FS,LF |
Toshiba Semiconductor and Storage |
SC-75, SOT-416 |
MOSFET N-CH 20V 800MA SSM |
3,927,795 |
$0.39 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 235mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 55 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SSM
- Package / Case:
- SC-75, SOT-416
|
| BSS138-FDICT-ND |
BSS138-7-F |
Diodes Incorporated |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 50V 200MA SOT23-3 |
2,339,527 |
$0.23 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| RU1J002YNTCLCT-ND |
RU1J002YNTCL |
Rohm Semiconductor |
SC-85 |
MOSFET N-CH 50V 200MA UMT3F |
1,707,234 |
$0.25 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 0.9V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 1mA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 26 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UMT3F
- Package / Case:
- SC-85
|
| FDV301NCT-ND |
FDV301N |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 25V 220MA SOT23 |
1,023,607 |
$0.23 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.06V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9.5 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| DMN2990UFZ-7BDICT-ND |
DMN2990UFZ-7B |
Diodes Incorporated |
3-XFDFN |
MOSFET N-CH 20V 250MA 3DFN |
968,542 |
$0.56 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 55.2 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 320mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN0606-3
- Package / Case:
- 3-XFDFN
|
| 296-39991-1-ND |
CSD13383F4 |
Texas Instruments |
3-XFDFN |
MOSFET N-CH 12V 2.9A 3PICOSTAR |
960,535 |
$0.56 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.6 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 291 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR (1x0.60)
- Package / Case:
- 3-XFDFN
|
| SSM6N7002KFULFCT-ND |
SSM6N7002KFU,LF |
Toshiba Semiconductor and Storage |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 60V 0.3A US6 |
915,131 |
$0.23 |
16 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 300mA
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40pF @ 10V
- Power - Max:
- 285mW
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- US6
|
| DMC2700UDM-7CT-ND |
DMC2700UDM-7 |
Diodes Incorporated |
SOT-23-6 |
MOSFET N/P-CH 20V 1.34A SOT26 |
901,978 |
$0.50 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.34A, 1.14A
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60.67pF @ 16V
- Power - Max:
- 1.12W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- SOT-23-6
- Supplier Device Package:
- SOT-26
|
| 785-1459-1-ND |
AO3421E |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 30V 3A SOT23-3L |
808,006 |
$0.49 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 215 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| 2N7002LT1GOSCT-ND |
2N7002LT1G |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 115MA SOT23-3 |
738,488 |
$0.26 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 225mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| BSS138CT-ND |
BSS138 |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 50V 220MA SOT23-3 |
729,985 |
$0.33 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| NTGD4167CT1GOSCT-ND |
NTGD4167CT1G |
onsemi |
SOT-23-6 Thin, TSOT-23-6 |
MOSFET N/P-CH 30V 2.6A 6TSOP |
712,032 |
$1.08 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A, 1.9A
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 295pF @ 15V
- Power - Max:
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package:
- 6-TSOP
|
| 2N7002DW-TPCT-ND |
2N7002DW-TP |
MCC (Micro Commercial Components) |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 60V 0.115A SOT363 |
690,532 |
$0.41 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 200mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- SOT-363
|
| 3757-PJA138K_R1_00001CT-ND |
PJA138K_R1_00001 |
Panjit International Inc. |
TO-236-3, SC-59, SOT-23-3 |
SOT-23, MOSFET |
664,134 |
$0.19 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| RV1C002UNT2CLCT-ND |
RV1C002UNT2CL |
Rohm Semiconductor |
3-SMD, No Lead |
MOSFET N-CH 20V 150MA VML0806 |
637,787 |
$0.40 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 100µA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VML0806
- Package / Case:
- 3-SMD, No Lead
|
| 785-1014-1-ND |
AO3420 |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET N-CH 20V 6A SOT23-3L |
617,558 |
$0.64 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 630 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| 1727-1142-1-ND |
BSS138P,215 |
Nexperia USA Inc. |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 360MA TO236AB |
605,048 |
$0.21 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta), 1.14W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| T2N7002AKLMCT-ND |
T2N7002AK,LM |
Toshiba Semiconductor and Storage |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 200MA SOT23 |
575,730 |
$0.16 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 320mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 2N7002WCT-ND |
2N7002W |
onsemi |
SC-70, SOT-323 |
MOSFET SOT323 N 60V 13.5OHM |
558,639 |
$0.52 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 24.5 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Tj)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3 (SOT323)
- Package / Case:
- SC-70, SOT-323
|
| RUM001L02T2CLCT-ND |
RUM001L02T2CL |
Rohm Semiconductor |
SOT-723 |
MOSFET N-CH 20V 100MA VMT3 |
551,064 |
$0.33 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 100µA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7.1 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VMT3
- Package / Case:
- SOT-723
|
| 1727-8643-1-ND |
2N7002NXAKR |
Nexperia USA Inc. |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 190MA TO236AB |
493,484 |
$0.14 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 190mA (Ta), 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.43 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 20 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 265mW (Ta), 1.33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| DMN3023L-7DICT-ND |
DMN3023L-7 |
Diodes Incorporated |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 30V 6.2A SOT23 |
479,519 |
$0.64 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 873 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| UM6K33NTNCT-ND |
UM6K33NTN |
Rohm Semiconductor |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 50V 0.2A UMT6 |
467,354 |
$0.46 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA
- Rds On (Max) @ Id, Vgs:
- 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 25pF @ 10V
- Power - Max:
- 120mW
- Operating Temperature:
- 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- UMT6
|
| 785-1015-1-ND |
AO3422 |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET N-CH 55V 2.1A SOT23-3 |
449,641 |
$0.62 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.25W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| BSS816NWH6327XTSA1CT-ND |
BSS816NWH6327XTSA1 |
Infineon Technologies |
SC-70, SOT-323 |
MOSFET N-CH 20V 1.4A SOT323-3 |
449,539 |
$0.35 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id:
- 750mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 2.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
- Package / Case:
- SC-70, SOT-323
|
| BSS84PH6327XTSA2CT-ND |
BSS84PH6327XTSA2 |
Infineon Technologies |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 60V 170MA SOT23-3 |
449,438 |
$0.31 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 19 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| T2N7002BKLMCT-ND |
T2N7002BK,LM |
Toshiba Semiconductor and Storage |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 400MA SOT23-3 |
435,600 |
$0.17 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 320mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| NTR4101PT1GOSCT-ND |
NTR4101PT1G |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 20V 1.8A SOT23-3 |
409,118 |
$0.45 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 675 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 420mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 785-1006-1-ND |
AO3407A |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 30V 4.3A SOT23-3L |
403,531 |
$0.52 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 830 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| 785-1586-1-ND |
AON7804 |
Alpha & Omega Semiconductor Inc. |
8-PowerSMD, Flat Leads |
MOSFET 2N-CH 30V 9A 8DFN |
398,448 |
$0.86 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9A
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 888pF @ 15V
- Power - Max:
- 3.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 8-PowerSMD, Flat Leads
- Supplier Device Package:
- 8-DFN (3x3)
|
| RE1C002UNTCLCT-ND |
RE1C002UNTCL |
Rohm Semiconductor |
SC-89, SOT-490 |
MOSFET N-CH 20V 200MA EMT3F |
390,742 |
$0.23 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 100mA, 2.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- EMT3F (SOT-416FL)
- Package / Case:
- SC-89, SOT-490
|
| SI2347DS-T1-GE3CT-ND |
SI2347DS-T1-GE3 |
Vishay Siliconix |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 30V 5A SOT23-3 |
378,943 |
$0.62 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 705 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 2N7002NCT-ND |
2N7002 |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET SOT23 N 60V 5OHM 150C |
370,968 |
$0.69 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| BSS123NCT-ND |
BSS123 |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 100V 170MA SOT23-3 |
366,274 |
$0.37 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 170mA
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| DMN2004TK-7DICT-ND |
DMN2004TK-7 |
Diodes Incorporated |
SOT-523 |
MOSFET N-CH 20V 540MA SOT523 |
338,357 |
$0.76 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 150 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
- Package / Case:
- SOT-523
|
| 785-1317-1-ND |
AO4882 |
Alpha & Omega Semiconductor Inc. |
8-SOIC (0.154", 3.90mm Width) |
MOSFET 2N-CH 40V 8A 8SOIC |
334,924 |
$1.31 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 415pF @ 20V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:
- 8-SOIC
|
| 1727-4692-1-ND |
2N7002P,215 |
Nexperia USA Inc. |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 360MA TO236AB |
327,419 |
$0.21 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| SI2318CDS-T1-GE3CT-ND |
SI2318CDS-T1-GE3 |
Vishay Siliconix |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 40V 5.6A SOT23-3 |
326,532 |
$0.62 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.25W (Ta), 2.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| BSS123LT1GOSCT-ND |
BSS123LT1G |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 100V 170MA SOT23-3 |
325,744 |
$0.32 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 1mA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 20 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 225mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 1727-4789-1-ND |
2N7002BK,215 |
Nexperia USA Inc. |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 350MA TO236AB |
318,603 |
$0.19 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 370mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| SSM3K339RLFCT-ND |
SSM3K339R,LF |
Toshiba Semiconductor and Storage |
SOT-23-3 Flat Leads |
MOSFET N-CH 40V 2A SOT-23F |
314,523 |
$0.43 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 8V
- Rds On (Max) @ Id, Vgs:
- 185mOhm @ 1A, 8V
- Vgs(th) (Max) @ Id:
- 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.1 nC @ 4.2 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 130 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23F
- Package / Case:
- SOT-23-3 Flat Leads
|
| 785-1107-1-ND |
AOD442 |
Alpha & Omega Semiconductor Inc. |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
MOSFET N-CH 60V 7A/37A TO252 |
314,078 |
$1.31 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2300 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
- Package / Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
|
| 785-1001-1-ND |
AO3401A |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 30V 4A SOT23-3L |
299,961 |
$0.52 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.2 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| 785-1544-1-ND |
AO3435 |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 20V 2.9A SOT23-3L |
282,867 |
$0.48 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 70mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 745 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| RUM002N02T2LCT-ND |
RUM002N02T2L |
Rohm Semiconductor |
SOT-723 |
MOSFET N-CH 20V 200MA VMT3 |
282,161 |
$0.35 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VMT3
- Package / Case:
- SOT-723
|
| 917-1212-1-ND |
EPC2206 |
EPC |
Die |
GANFET N-CH 80V 90A DIE |
277,301 |
$6.02 |
18 params- FET Type:
- N-Channel
- Technology:
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 29A, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 5 V
- Vgs (Max):
- +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1940 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Package / Case:
- Die
|
| BSS123NH6327XTSA1CT-ND |
BSS123NH6327XTSA1 |
Infineon Technologies |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 100V 190MA SOT23-3 |
273,117 |
$0.34 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 20.9 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| DMN2400UFB4-7DICT-ND |
DMN2400UFB4-7 |
Diodes Incorporated |
3-XFDFN |
MOSFET N-CH 20V 750MA 3DFN |
270,276 |
$0.35 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 470mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
- Package / Case:
- 3-XFDFN
|
| DMN601DWKDICT-ND |
DMN601DWK-7 |
Diodes Incorporated |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 60V 0.305A SOT363 |
263,647 |
$0.77 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 305mA
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 200mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- SOT-363
|
| 353-SL3401A-TPCT-ND |
SL3401A-TP |
MCC (Micro Commercial Components) |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 30V 4.4A SOT23-3L |
258,822 |
$0.44 |
17 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1050 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3L
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|