| 264-SSM3K56FS,LFCT-ND |
SSM3K56FS,LF |
Toshiba Semiconductor and Storage |
SC-75, SOT-416 |
MOSFET N-CH 20V 800MA SSM |
3,969,538 |
$0.39 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 235mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 55 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SSM
- Package / Case:
- SC-75, SOT-416
|
| RU1J002YNTCLCT-ND |
RU1J002YNTCL |
Rohm Semiconductor |
SC-85 |
MOSFET N-CH 50V 200MA UMT3F |
1,594,446 |
$0.25 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 0.9V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 1mA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 26 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UMT3F
- Package / Case:
- SC-85
|
| BSS138CT-ND |
BSS138 |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 50V 220MA SOT23-3 |
1,168,429 |
$0.32 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| T2N7002BKLMCT-ND |
T2N7002BK,LM |
Toshiba Semiconductor and Storage |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 400MA SOT23-3 |
1,143,985 |
$0.17 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 320mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 2N7002DW-TPCT-ND |
2N7002DW-TP |
MCC (Micro Commercial Components) |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 60V 0.115A SOT363 |
991,289 |
$0.41 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 200mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- SOT-363
|
| 296-39991-1-ND |
CSD13383F4 |
Texas Instruments |
3-XFDFN |
MOSFET N-CH 12V 2.9A 3PICOSTAR |
966,054 |
$0.56 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.6 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 291 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR (1x0.60)
- Package / Case:
- 3-XFDFN
|
| DMC2700UDM-7CT-ND |
DMC2700UDM-7 |
Diodes Incorporated |
SOT-23-6 |
MOSFET N/P-CH 20V 1.34A SOT26 |
913,826 |
$0.50 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.34A, 1.14A
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60.67pF @ 16V
- Power - Max:
- 1.12W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- SOT-23-6
- Supplier Device Package:
- SOT-26
|
| 785-1459-1-ND |
AO3421E |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 30V 3A SOT23-3L |
863,648 |
$0.49 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 215 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| RE1C002UNTCLCT-ND |
RE1C002UNTCL |
Rohm Semiconductor |
SC-89, SOT-490 |
MOSFET N-CH 20V 200MA EMT3F |
759,703 |
$0.23 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 100mA, 2.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- EMT3F (SOT-416FL)
- Package / Case:
- SC-89, SOT-490
|
| NTGD4167CT1GOSCT-ND |
NTGD4167CT1G |
onsemi |
SOT-23-6 Thin, TSOT-23-6 |
MOSFET N/P-CH 30V 2.6A 6TSOP |
755,050 |
$1.08 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A, 1.9A
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 295pF @ 15V
- Power - Max:
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package:
- 6-TSOP
|
| RV1C002UNT2CLCT-ND |
RV1C002UNT2CL |
Rohm Semiconductor |
3-SMD, No Lead |
MOSFET N-CH 20V 150MA VML0806 |
639,924 |
$0.33 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 100µA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VML0806
- Package / Case:
- 3-SMD, No Lead
|
| 2N7002NCT-ND |
2N7002 |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET SOT23 N 60V 5OHM 150C |
632,733 |
$0.67 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 785-1014-1-ND |
AO3420 |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET N-CH 20V 6A SOT23-3L |
627,777 |
$0.64 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.8 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 630 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| 785-1015-1-ND |
AO3422 |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET N-CH 55V 2.1A SOT23-3 |
589,286 |
$0.62 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.25W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| 2N7002WCT-ND |
2N7002W |
onsemi |
SC-70, SOT-323 |
MOSFET SOT323 N 60V 13.5OHM |
578,959 |
$0.51 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 24.5 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Tj)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3 (SOT323)
- Package / Case:
- SC-70, SOT-323
|
| UM6K33NTNCT-ND |
UM6K33NTN |
Rohm Semiconductor |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 50V 0.2A UMT6 |
548,300 |
$0.46 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA
- Rds On (Max) @ Id, Vgs:
- 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 25pF @ 10V
- Power - Max:
- 120mW
- Operating Temperature:
- 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- UMT6
|
| 2N7002K-T1-GE3CT-ND |
2N7002K-T1-GE3 |
Vishay Siliconix |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 300MA TO236 |
512,685 |
$0.31 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| SI2347DS-T1-GE3CT-ND |
SI2347DS-T1-GE3 |
Vishay Siliconix |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 30V 5A SOT23-3 |
465,095 |
$0.62 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 705 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| DMG1023UV-7DICT-ND |
DMG1023UV-7 |
Diodes Incorporated |
SOT-563, SOT-666 |
MOSFET 2P-CH 20V 1.03A SOT563 |
451,791 |
$0.66 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.03A
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 59.76pF @ 16V
- Power - Max:
- 530mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- SOT-563, SOT-666
- Supplier Device Package:
- SOT-563
|
| 785-1006-1-ND |
AO3407A |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 30V 4.3A SOT23-3L |
445,170 |
$0.52 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 830 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| FDV301NCT-ND |
FDV301N |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 25V 220MA SOT23 |
430,167 |
$0.22 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.06V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.7 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9.5 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 785-1586-1-ND |
AON7804 |
Alpha & Omega Semiconductor Inc. |
8-PowerSMD, Flat Leads |
MOSFET 2N-CH 30V 9A 8DFN |
419,791 |
$0.86 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9A
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 888pF @ 15V
- Power - Max:
- 3.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 8-PowerSMD, Flat Leads
- Supplier Device Package:
- 8-DFN (3x3)
|
| NTZD3154NT1GOSCT-ND |
NTZD3154NT1G |
onsemi |
SOT-563, SOT-666 |
MOSFET 2N-CH 20V 0.54A SOT563 |
418,813 |
$0.39 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 540mA
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 150pF @ 16V
- Power - Max:
- 250mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- SOT-563, SOT-666
- Supplier Device Package:
- SOT-563
|
| 917-1212-1-ND |
EPC2206 |
EPC |
Die |
GANFET N-CH 80V 90A DIE |
386,062 |
$5.68 |
18 params- FET Type:
- N-Channel
- Technology:
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 29A, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 5 V
- Vgs (Max):
- +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1940 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Package / Case:
- Die
|
| RUM002N02T2LCT-ND |
RUM002N02T2L |
Rohm Semiconductor |
SOT-723 |
MOSFET N-CH 20V 200MA VMT3 |
364,907 |
$0.35 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 200mA, 2.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VMT3
- Package / Case:
- SOT-723
|
| 785-1317-1-ND |
AO4882 |
Alpha & Omega Semiconductor Inc. |
8-SOIC (0.154", 3.90mm Width) |
MOSFET 2N-CH 40V 8A 8SOIC |
353,905 |
$1.31 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 415pF @ 20V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:
- 8-SOIC
|
| DMN2004TK-7DICT-ND |
DMN2004TK-7 |
Diodes Incorporated |
SOT-523 |
MOSFET N-CH 20V 540MA SOT523 |
350,999 |
$0.80 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 150 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
- Package / Case:
- SOT-523
|
| BSS806NH6327XTSA1CT-ND |
BSS806NH6327XTSA1 |
Infineon Technologies |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 20V 2.3A SOT23-3 |
337,649 |
$0.45 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id:
- 750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.7 nC @ 2.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 529 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| FDV303NCT-ND |
FDV303N |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 25V 680MA SOT23 |
332,989 |
$0.32 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.3 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| DMP2004KDICT-ND |
DMP2004K-7 |
Diodes Incorporated |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 20V 600MA SOT23-3 |
331,514 |
$0.38 |
17 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 900mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 175 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 550mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| T2N7002AKLMCT-ND |
T2N7002AK,LM |
Toshiba Semiconductor and Storage |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 200MA SOT23 |
320,311 |
$0.16 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 320mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 785-1107-1-ND |
AOD442 |
Alpha & Omega Semiconductor Inc. |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
MOSFET N-CH 60V 7A/37A TO252 |
317,084 |
$1.31 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2300 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
- Package / Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
|
| SSM3K72KCTL3FCT-ND |
SSM3K72KCT,L3F |
Toshiba Semiconductor and Storage |
SC-101, SOT-883 |
MOSFET N-CH 60V 400MA CST3 |
316,557 |
$0.23 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST3
- Package / Case:
- SC-101, SOT-883
|
| 296-38912-1-ND |
CSD13381F4 |
Texas Instruments |
3-XFDFN |
MOSFET N-CH 12V 2.1A 3PICOSTAR |
311,044 |
$0.39 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4 nC @ 4.5 V
- Vgs (Max):
- 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR (1x0.60)
- Package / Case:
- 3-XFDFN
|
| SI2302CDS-T1-E3CT-ND |
SI2302CDS-T1-E3 |
Vishay Siliconix |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 20V 2.6A SOT23-3 |
306,982 |
$0.71 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- FET Feature:
- -
- Power Dissipation (Max):
- 710mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 785-1544-1-ND |
AO3435 |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET P-CH 20V 2.9A SOT23-3L |
300,927 |
$0.48 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 70mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 745 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| DMN601DWKDICT-ND |
DMN601DWK-7 |
Diodes Incorporated |
6-TSSOP, SC-88, SOT-363 |
MOSFET 2N-CH 60V 0.305A SOT363 |
291,141 |
$0.77 |
14 params- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 305mA
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 200mW
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Mounting Type:
- Surface Mount
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package:
- SOT-363
|
| FDN337NCT-ND |
FDN337N |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 30V 2.2A SUPERSOT3 |
285,595 |
$0.90 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| BSS138LT1GOSCT-ND |
BSS138LT1G |
onsemi |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 50V 200MA SOT23-3 |
275,753 |
$0.34 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 1mA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 225mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| SSM3J35AMFVL3FCT-ND |
SSM3J35AMFV,L3F |
Toshiba Semiconductor and Storage |
SOT-723 |
MOSFET P-CH 20V 250MA VESM |
275,136 |
$0.25 |
17 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 100µA
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VESM
- Package / Case:
- SOT-723
|
| SSM3J328RLFCT-ND |
SSM3J328R,LF |
Toshiba Semiconductor and Storage |
SOT-23-3 Flat Leads |
MOSFET P-CH 20V 6A SOT23F |
274,737 |
$0.48 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 29.8mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.8 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 840 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23F
- Package / Case:
- SOT-23-3 Flat Leads
|
| SSM3J372RLFCT-ND |
SSM3J372R,LF |
Toshiba Semiconductor and Storage |
SOT-23-3 Flat Leads |
MOSFET P-CH 30V 6A SOT23F |
268,500 |
$0.41 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 4.5 V
- Vgs (Max):
- +12V, -6V
- Input Capacitance (Ciss) (Max) @ Vds:
- 560 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23F
- Package / Case:
- SOT-23-3 Flat Leads
|
| SSM3J338RLFCT-ND |
SSM3J338R,LF |
Toshiba Semiconductor and Storage |
SOT-23-3 Flat Leads |
MOSFET P-CH 12V 6A SOT23F |
267,701 |
$0.57 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 8V
- Rds On (Max) @ Id, Vgs:
- 17.6mOhm @ 6A, 8V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.5 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23F
- Package / Case:
- SOT-23-3 Flat Leads
|
| 785-1004-1-ND |
AO3404A |
Alpha & Omega Semiconductor Inc. |
3-SMD, SOT-23-3 Variant |
MOSFET N-CH 30V 5.8A SOT23-3L |
265,322 |
$0.50 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 448 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- 3-SMD, SOT-23-3 Variant
|
| BSS138-FDICT-ND |
BSS138-7-F |
Diodes Incorporated |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 50V 200MA SOT23-3 |
263,505 |
$0.23 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 220mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| 353-SL3401A-TPCT-ND |
SL3401A-TP |
MCC (Micro Commercial Components) |
TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 30V 4.4A SOT23-3L |
262,337 |
$0.44 |
17 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1050 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3L
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| SSM3J36FSLFCT-ND |
SSM3J36FS,LF |
Toshiba Semiconductor and Storage |
SC-75, SOT-416 |
MOSFET P-CH 20V 330MA SSM |
262,299 |
$0.27 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1.31Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.2 nC @ 4 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 43 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SSM
- Package / Case:
- SC-75, SOT-416
|
| 785-1025-1-ND |
AO4421 |
Alpha & Omega Semiconductor Inc. |
8-SOIC (0.154", 3.90mm Width) |
MOSFET P-CH 60V 6.2A 8SOIC |
262,288 |
$1.41 |
18 params- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 6.2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2900 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Package / Case:
- 8-SOIC (0.154", 3.90mm Width)
|
| SI2302CDS-T1-GE3CT-ND |
SI2302CDS-T1-GE3 |
Vishay Siliconix |
TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 20V 2.6A SOT23-3 |
261,866 |
$0.82 |
17 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5 nC @ 4.5 V
- Vgs (Max):
- ±8V
- FET Feature:
- -
- Power Dissipation (Max):
- 710mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Package / Case:
- TO-236-3, SC-59, SOT-23-3
|
| SQ1470AEH-T1_GE3CT-ND |
SQ1470AEH-T1_GE3 |
Vishay Siliconix |
6-TSSOP, SC-88, SOT-363 |
MOSFET N-CH 30V 1.7A SOT363 SC70 |
261,467 |
$0.92 |
18 params- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.2 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 450 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
- Package / Case:
- 6-TSSOP, SC-88, SOT-363
|